Palladium thin film contacts on p-type ZnSe: adjustment of electrical properties by reaction diffusion

The ternary system PdZnSe was investigated at 340°C. A complete isothermal phase diagram is given, containing a newly discovered ternary phase τ 2 of approximate composition Pd 62Zn 32Se 6. The reaction diffusion between Pd and ZnSe was investigated at 340°C and the diffusion path is described. Th...

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Bibliographic Details
Published inJournal of crystal growth Vol. 184; pp. 406 - 410
Main Authors Goesmann, F., Studnitzky, T., Schmid-Fetzer, R., Pisch, A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1998
Subjects
Electrical contacts
Palladium
Phase equilibria
ZnSe
71.55.Gs
81.30.Dz
Phase equilibria
85.20.s
Palladium
ZnSe
Electrical contacts
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Summary:The ternary system PdZnSe was investigated at 340°C. A complete isothermal phase diagram is given, containing a newly discovered ternary phase τ 2 of approximate composition Pd 62Zn 32Se 6. The reaction diffusion between Pd and ZnSe was investigated at 340°C and the diffusion path is described. Thin film palladium contacts were annealed at 250°C for 1–30 min. Lowest contact resistivities were reproducibly obtained after 2 min annealing. The results are related to the study of the ternary PdZnSe phase equilibria and Pd/ZnSe bulk reaction diffusion. A complex contact metallurgy is responsible for the attainment of good ohmic contact properties.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)80085-7