3D Nanoarchitectured Hexagonal Boron Nitride with Integrated Single Photon Emitters

• Published in: Advanced optical materials Vol. 11; no. 21
• Main Authors: Aleman, Christopher Florencio, Lyu, Jiecheng, Noyan, Mehmet A., McCreary, Kathleen M., Han, Jiuhui, Johnson, Isaac, Gao, Qingyang, Niebur, Maximilian, Jonker, Berend T., Chen, Mingwei
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.11.2023
• Subjects: Boron nitride; Chemical vapor deposition; Color centers; Defects; Emitters; Heterogeneity; Lattice strain; Materials science; Minimal surfaces; Optical activity; Optics; Photons; Substrates; Surface structure
• ISSN: 2195-1071; 2195-1071
• DOI: 10.1002/adom.202300737

Two‐dimensional (2D) hexagonal boron nitride (hBN) is one of the most promising candidates to host solid‐state single photon emitters (SPEs) for various quantum technologies. However, the 2D nature with an atomic‐scale thickness leads to inevitable challenges in spectral variability caused by substrate disturbance, lattice strain heterogeneity, and defect variation. Here, three‐dimensional (3D) nanoarchitectured hBN is reported with integrated SPEs from native defects generated during high‐temperature chemical vapor deposition (CVD). The 3D hBN has a quasi‐periodic gyroid minimal surface structure and is composed of a continuous 2D hBN sheet with built‐in convex and concave curvatures that promote the formation of optically active and thermally robust native defects. The free‐standing feature of the gyroid hBN with a nearly zero mean curvature can effectively eliminate the substrate disturbance and minimize lattice strain heterogeneity. As a result, naturally occurring defects with a narrow SPE spectral distribution can be created and activated as color centers in the 3D hBN, and the density of the SPEs can be tailored by CVD temperature.