Physical properties of InN with the band gap energy of 1.1 eV

We report the electrical and optical properties of undoped and Mg-doped InN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates. InN has a hexagonal structure and its c-axis is normal to the (0 0 0 1) sapphire surface. The Raman spectra show a strong E 2 (low) mode at 87 cm −1. The band...

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Bibliographic Details
Published inJournal of crystal growth Vol. 227; pp. 481 - 485
Main Authors Inushima, T, Mamutin, V.V, Vekshin, V.A, Ivanov, S.V, Sakon, T, Motokawa, M, Ohoya, S
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.2001
Subjects
A1.Characterization
A3.Molecular beam epitaxy
B1.Nitrides
B2.Semiconducting indium compounds
61.10.Kw
78.66.Fd
72.80.Ey
B1.Nitrides
74.62.Dh
A3.Molecular beam epitaxy
A1.Characterization
B2.Semiconducting indium compounds
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Summary:We report the electrical and optical properties of undoped and Mg-doped InN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates. InN has a hexagonal structure and its c-axis is normal to the (0 0 0 1) sapphire surface. The Raman spectra show a strong E 2 (low) mode at 87 cm −1. The band gap energies of the samples are much smaller than 1.9 eV. InN with the band gap energy less than 1.5 eV shows resistivity behavior anomaly below 2.6 K. The relation between the low temperature resistivity anomaly and the band gap energy of InN is discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00747-3