Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400–700 °C

The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400–700 °C was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T∼400 °C. Non-uniform generation of TDs and thermal acceptors was found for an annealing tempera...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 66; no. 1; pp. 385 - 391
Main Authors Antonova, I.V., Gulyev, M.B., Safronov, L.N., Smagulova, S.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2003
Subjects
Electron irradiation
Inhomogeneity
Silicon
Thermal acceptors
Thermal donors
Silicon
Thermal donors
Inhomogeneity
Thermal acceptors
Electron irradiation
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Summary:The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400–700 °C was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T∼400 °C. Non-uniform generation of TDs and thermal acceptors was found for an annealing temperature of 450 °C. The formation of areas with p- and n-type conductivity correlates with the non-uniform distribution of oxygen in silicon. The temperature interval of thermal acceptor generation in electron-irradiated, Cz-grown silicon was found to be very narrow around 450 °C.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00914-0