A pressure sensor based on a nitride membrane using single-crystalline piezoresistors
The realization of a piezoresistive pressure sensor, applying a process that combines the advantages of silicon nitride membranes with those of monocrystalline silicon transducers, is presented. This technology, which leads to small devices, low spread in sensor performance and moderate process cost...
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| Published in | Sensors and actuators. A. Physical. Vol. 54; no. 1; pp. 488 - 492 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
1996
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0924-4247 1873-3069 |
| DOI | 10.1016/S0924-4247(97)80009-X |
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| Abstract | The realization of a piezoresistive pressure sensor, applying a process that combines the advantages of silicon nitride membranes with those of monocrystalline silicon transducers, is presented. This technology, which leads to small devices, low spread in sensor performance and moderate process cost, can be utilized for mechanical transducers, e.g., pressure sensors, accelerometers, etc., as well as for thermal sensor devices. The design, technology and characterization of a 500 mbar pressure sensor are described. |
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| AbstractList | The realization of a piezoresistive pressure sensor, applying a process that combines the advantages of silicon nitride membranes with those of monocrystalline silicon transducers, is presented. This technology, which leads to small devices, low spread in sensor performance and moderate process cost, can be utilized for mechanical transducers, e.g., pressure sensors, accelerometers, etc., as well as for thermal sensor devices. The design, technology and characterization of a 500 mbar pressure sensor are described. |
| Author | Folkmer, Bernd Steiner, Peter Lang, Walter |
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| Cites_doi | 10.1109/6.278394 10.1063/1.98460 |
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| Keywords | Pressure sensors Piezoresistors Silicon nitride |
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| References | Allen, Mehregany, Howe, Senturia (BIB4) 1987; 51 Petersen (BIB1) 1982; 70 Lang, Hochecker, Folkmer (BIB3) 1995 Folkmer, Hochecker, Kühl, Lang (BIB5) 1995 Bryzek, Petersen, McCulley (BIB2) 1994 Timoshenko, Woinowski-Krieger (BIB10) 1983 Sze, Sze (BIB6) 1981 Seidel (BIB8) 1988 Folkmer, Steiner, Lang (BIB9) 1995 ICECREMI Version 4.2 by Fraunhofer-Institute for Integrated Circuits, Erlangen, Germany. Bryzek (10.1016/S0924-4247(97)80009-X_BIB2) 1994 Lang (10.1016/S0924-4247(97)80009-X_BIB3) 1995 Allen (10.1016/S0924-4247(97)80009-X_BIB4) 1987; 51 Folkmer (10.1016/S0924-4247(97)80009-X_BIB9) 1995 Sze (10.1016/S0924-4247(97)80009-X_BIB6_1) 1981 10.1016/S0924-4247(97)80009-X_BIB7 Sze (10.1016/S0924-4247(97)80009-X_BIB6_2) 1981 Petersen (10.1016/S0924-4247(97)80009-X_BIB1) 1982; 70 Seidel (10.1016/S0924-4247(97)80009-X_BIB8) 1988 Timoshenko (10.1016/S0924-4247(97)80009-X_BIB10) 1983 Folkmer (10.1016/S0924-4247(97)80009-X_BIB5) 1995 |
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| SubjectTerms | Piezoresistors Pressure sensors Silicon nitride |
| Title | A pressure sensor based on a nitride membrane using single-crystalline piezoresistors |
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