Fast Cu(In,Ga)Se2 precursor growth: Impact on solar cell

In order to reduce the co-evaporation time of Cu(In,Ga)Se2 (CIGSe) thin film absorber, a sequential approach has been investigated. CIGSe layers have been grown using the three-step based CUPRO (Cu-Poor/Rich/Off) process at substrate temperature of 600 and 500 degree C. The first step consists in th...

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 519; no. 21; pp. 7221 - 7223
Main Authors PAINCHAUD, T, BARREAU, N, ARZEL, L, KESSLER, J
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 31.08.2011
Subjects
Applied sciences
Copper
COPPER INDIUM SELENIDE
COPPER SELENIDE
Cross-disciplinary physics: materials science; rheology
DEPOSITION
Devices
ELECTRONIC PRODUCTS
Energy
Exact sciences and technology
IMPACT PROPERTIES
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Natural energy
Photovoltaic cells
Photovoltaic conversion
Physics
Precursors
SOLAR CELLS
Solar cells. Photoelectrochemical cells
Solar energy
Theory and models of film growth
THIN FILMS
Solar cells
Thin films
Gallium
Fast growth
Co-evaporation
Growth mechanism
Cu(In,Ga)Se
Evaporation
Copper
Precursor
Deposition process
Online AccessGet full text

Cover

More Information
Summary:In order to reduce the co-evaporation time of Cu(In,Ga)Se2 (CIGSe) thin film absorber, a sequential approach has been investigated. CIGSe layers have been grown using the three-step based CUPRO (Cu-Poor/Rich/Off) process at substrate temperature of 600 and 500 degree C. The first step consists in the growth of Cu-poor ([Cu]/[In+Ga]=0.9) precursor layers. This paper aims at investigating the impact of this layer deposition duration on the CIGSe and respective solar cell properties. It is observed that for the two substrate temperatures investigated, the morphological and structural properties of the CIGSe layers do not change with increasing precursor deposition speed, even when it is increased by ten. Furthermore, the respective device performance also appears not affected by this reduction of the precursor growth time; all cells demonstrate 15% efficiency. From this work, the duration of our standard deposition process could be decreased from 23 to 14min without performance loss independently of the substrate temperature.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.01.098