VR device with high resolution, high luminance, and low power consumption using 1.50‐in. organic light‐emitting diode display

• Published in: Journal of the Society for Information Display Vol. 32; no. 8; pp. 580 - 591
• Main Authors: Ikeda, Hisao, Hatsumi, Ryo, Tamatsukuri, Yuki, Miyata, Shoki, Nakamura, Daiki, Kozuma, Munehiro, Kobayashi, Hidetomo, Yamane, Yasumasa, Yamagata, Sachiko, Tsukamoto, Yousuke, Yamazaki, Shunpei
• Format: Journal Article
• Language: English
• Published: 01.08.2024
• Subjects: CAAC‐OS; metal maskless lithography; OLED microdisplay; OSLSI/SiLSI structure; pancake lens; ultrahigh pixel density
• ISSN: 1071-0922; 1938-3657
• DOI: 10.1002/jsid.1345

We fabricated a microdisplay with a 1.50‐in. organic light‐emitting diode (OLED) and a pixel density as high as 3207 ppi. An ideal display with high luminance, low power consumption, an ultrahigh aperture ratio, and a wide color gamut can be fabricated using a metal maskless lithography technology for patterning OLED layers and an oxide semiconductor large‐scale integration (OSLSI)/silicon LSI backplane. We designed a virtual reality device that exhibited less ghosting and a field of view of 90° or greater by combining the microdisplay and a novel pancake lens. We fabricated a 1.50‐in., 3207‐ppi OLED microdisplay with an oxide semiconductor LSI/silicon LSI backplane and a novel pancake lens. Patterning an OLED layer by lithography allows fabrication of an ideal display having low power consumption, an ultra‐high aperture ratio, and a wide color gamut.