Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K

• Published in: IEEE transactions on electron devices Vol. 40; no. 10; pp. 1872 - 1875
• Main Authors: Leu, I.-Y., Neugroschel, A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.10.1993; Institute of Electrical and Electronics Engineers
• Subjects: Capacitance; Charge carriers: generation, recombination, lifetime, trapping, mean free paths; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Data mining; Design methodology; Doping; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Electrons; EPROM; Exact sciences and technology; Nonvolatile memory; Physics; Silicon; Threshold voltage; Transconductance; Charge carrier scattering; Life span; Transport processes; Silicon; Minority carriers; Carrier mobility; Transistors; Scattering lengths
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.277348

Minority-carrier electron lifetime, mobility and diffusion length in heavily doped p-type Si were measured at 296 and 77 K. It was found that a 296 K mu /sub n/ (pSi) approximately= mu /sub n/ (nSi) for N/sub AA/<or approximately=5*10/sup 18/ cm/sup -3/, while mu /sub n/ (pSi)/ mu /sub n/ (nSi) approximately=1 to 2.7 for higher dopings. The results also show that for N/sub AA/<or approximately=3*10/sup 19/ cm/sup -3/, D (pSi) at 77 K is smaller than that at 296 K, while for higher dopings D/sub n/ (pSi) is larger at 77 K than at 296 K. mu /sub n/ (pSi) at 77 K increases with the increasing doping above N/sub AA/>3*10/sup 18/ cm/sup -3/, in contrast to the opposite dependence for mu /sub n/ (nSi) in n/sup +/ Si.< >