Test of McWhorter's model of low-frequency noise in Si MOSTs

A quantitative test of McWhorter's model is described. It is based on measurements of the equivalent noise voltage and trapping efficiency of surface states. The results indicate that McWhorter's mechanism is probably dominant over a large range of gate voltages for some MOSTs and up to a...

Full description

Saved in:
Bibliographic Details
Published inMicroelectronics and reliability Vol. 10; no. 6; pp. 429 - 433
Main Authors Berz, F., Prior, C.G.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 1971
Online AccessGet full text

Cover

More Information
Summary:A quantitative test of McWhorter's model is described. It is based on measurements of the equivalent noise voltage and trapping efficiency of surface states. The results indicate that McWhorter's mechanism is probably dominant over a large range of gate voltages for some MOSTs and up to a few volts above threshold for others. In the latter case, some other mechanism is dominant for large voltages.
ISSN:0026-2714
1872-941X
DOI:10.1016/0026-2714(71)90101-6