InAlAs/InGaAs HBT X-band double-balanced upconverter

We report on an InAlAs/InGaAs HBT Gilbert cell double-balanced mixer which upconverts a 3 GHz IF signal to an RF frequency of 5-12 GHz. The mixer cell achieves a conversion loss of between 0.8 dB and 2.6 dB from 5 to 12 GHz. The LO-RF and IF-RF isolations are better than 30 dB at an LO drive of +5 d...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 29; no. 10; pp. 1238 - 1243
Main Authors Kobayashi, K.W., Tran, L.T., Bui, S., Oki, A.K., Streit, D.C., Rosen, M.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.1994
Subjects
Circuits
Frequency conversion
Gain
Heterojunction bipolar transistors
Indium compounds
Indium gallium arsenide
Mixers
Radio frequency
Radiofrequency amplifiers
RF signals
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Summary:We report on an InAlAs/InGaAs HBT Gilbert cell double-balanced mixer which upconverts a 3 GHz IF signal to an RF frequency of 5-12 GHz. The mixer cell achieves a conversion loss of between 0.8 dB and 2.6 dB from 5 to 12 GHz. The LO-RF and IF-RF isolations are better than 30 dB at an LO drive of +5 dBm across the RF band. A pre-distortion circuit is used to increase the linear input power range of the LO port to above +5 dBm. Discrete amplifiers designed for the IF and RF frequency ports make up the complete upconverter architecture which achieves a conversion gain of 40 dB for an RF output bandwidth of 10 GHz. The upconverter chip set fabricated with InAlAs/InGaAs HBT's demonstrates the widest gain-bandwidth performance of a Gilbert cell based upconverter compared to previous GaAs and InP HBT or Si-bipolar IC's.< >
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ISSN:0018-9200
1558-173X
DOI:10.1109/4.315209