Stress effect on current-induced degradation of Be-doped AlGaAs/GaAs heterojunction bipolar transistors

The effect of stress on the current-induced degradation of current-voltage characteristics in AlGaAs/GaAs heterojunction bipolar transistors with Be-doped base layers is investigated. Transistors with different orientations of the emitter mesa and different thicknesses of the passivation film are bi...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 31; no. 3; pp. 751 - 756
Main Authors MOCHIZUKI, K, ISOMAE, S, MASUDA, H, TANOUE, T, KUSANO, C
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.03.1992
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Degradation
Gallium Arsenides
Constraint
Ion scattering
Beryllium
Heterojunction transistor
Aluminium Gallium Arsenides Mixed
Reliability
III-V compound
Boundary element method
Bipolar transistor
Passivation
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Summary:The effect of stress on the current-induced degradation of current-voltage characteristics in AlGaAs/GaAs heterojunction bipolar transistors with Be-doped base layers is investigated. Transistors with different orientations of the emitter mesa and different thicknesses of the passivation film are bias tested at room temperature. The results are compared with the stress distributions along the emitter-base junction obtained from a two-dimensional calculation using the boundary element method. It is found that the degradation is caused by the diffusion of Be under high-current density operations and that the flux of Be diffusing from the base layer to the emitter layer is strongly related to the stress distributions around the periphery of the emitter-base junction.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.751