Study of the role of air exposure time to interface oxide on HCl treated InAs (100) before atomic layer deposition of Al2O3

• Published in: Vacuum Vol. 193; p. 110555
• Main Authors: Jing, Meiyi, Lu, Tongkang, Sun, Yong, Zhao, Xiaoliang, Feng, Ze, Wang, Yitong, Liu, Hui, Wang, Wei-Hua, Lu, Feng, Cheng, Yahui, Han, Genquan, Dong, Hong
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2021
• Subjects: Atomic layer deposition; High k dielectrics; III-V semiconductor; III-V semiconductor; Atomic layer deposition; High k dielectrics
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2021.110555

The interface quality between III-V compound semiconductor and the high k dielectrics is crucial to III-V semiconductor-based devices. Minimized interface oxide concentration is desired to achieve high quality interface. A thin layer of As metal exists after HCl treatment for InAs, which can be oxidized in air. The AsOx can be decreased by following atomic layer deposition (ALD) of the high k dielectrics via the “clean-up” effect. The air exposure time after HCl treatment for InAs substrate is optimized prior to ALD of Al2O3. This work shed light to high quality InAs based devices. •As-As thin metal layer present on the HCl treated InAs (100), oxidation ocurrs upon air exposure.•Proper air exposure time results in optimized thickness of interface oxides for the “clean up” effect to take place.•Ideal interface is obtainedfor the sample with 20 min of air exposure prior to ALD of Al2O3.