Photoluminescence and electroluminescence properties of a samarium complex Sm(TTA) 3phen

The photoluminescence (PL) and electroluminescence (EL) properties of a samarium complex Sm(TTA) 3phen (TTA = 2-thenoyltrifluoroacetonate, phen = 1,10-phenanthroline) were investigated. The results showed that Sm(TTA) 3phen could be used as promising luminescent or electron transporting material in...

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Published inChemical physics letters Vol. 443; no. 4; pp. 258 - 263
Main Authors Deng, Ruiping, Yu, Jiangbo, Zhang, Hongjie, Zhou, Liang, Peng, Zeping, Li, Zhefeng, Guo, Zhiyong
Format Journal Article
LanguageEnglish
Published Elsevier B.V 06.08.2007
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Summary:The photoluminescence (PL) and electroluminescence (EL) properties of a samarium complex Sm(TTA) 3phen (TTA = 2-thenoyltrifluoroacetonate, phen = 1,10-phenanthroline) were investigated. The results showed that Sm(TTA) 3phen could be used as promising luminescent or electron transporting material in the electroluminescent devices. The difference between PL and EL spectra was noticed and discussed. Besides, it is noteworthy that the choice of the hole transporting layer (HTL) showed significant effect on the device performance, which was explained by the low-lying highest occupied molecular orbit (HOMO) level of Sm(TTA) 3phen and the different hole injection barrier at the HTL/EML (emitting material layer) interface. The photoluminescence (PL) and electroluminescence (EL) properties of a samarium complex Sm(TTA) 3phen (TTA = 2-thenoyltrifluoroacetonate, phen = 1,10-phenanthroline) were investigated. The results show that Sm(TTA) 3phen could be used as promising luminescent and electron transporting material in the electroluminescent devices. The difference between PL and EL spectra was noticed and discussed. Besides, it is noteworthy that the choice of the hole transporting layer (HTL) showed significant effect on the device performance, which was explained by the low-lying highest occupied molecular orbit (HOMO) level of Sm(TTA) 3phen and the different hole injection barrier at the HTL/EML (emitting material layer) interface.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2007.06.080