Concurrent Thermal Reduction and Boron-Doped Graphene Oxide by Metal–Organic Chemical Vapor Deposition for Ultraviolet Sensing Application

• Published in: Applied nano Vol. 5; no. 1; pp. 1 - 13
• Main Authors: Ryu, Beo Deul, Jang, Hyeon-Sik, Ko, Kang Bok, Han, Min, Cuong, Tran Viet, Choi, Chel-Jong, Hong, Chang-Hee
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.01.2024
• Subjects: Annealing; annealing temperature; Boron; Chemical vapor deposition; Doping; Electric contacts; Electrical properties; Electrons; Graphene; Metalorganic chemical vapor deposition; Organic chemicals; Organic chemistry; photodetector; Photoelectrons; Plasma etching; reduced graphene oxide; Silicon substrates; Spectrum analysis; Temperature; Thermal reduction; Work functions; X ray photoelectron spectroscopy; Japan
• ISSN: 2673-3501; 2673-3501
• DOI: 10.3390/applnano5010001

We synthesized a boron-doped reduced graphene oxide (BrGO) material characterized by various electrical properties, through simultaneous thermal reduction and doping procedures, using a metal–organic chemical vapor deposition technique. X-ray photoelectron spectroscopy (XPS) was used to study the impact of the doping level on the B bonding in the reduced graphene oxide (rGO) layer that is influenced by the annealing temperature. The synthesized BrGO layer demonstrated a high B concentration with a considerable number of O-B bonds, that were altered by annealing temperatures. This resulted in a decreased work function and the formation of a Schottky contact between the BrGO and n-type Si substrate. Due to the higher proportion of B-C and B-C3 bonding in the BrGO/Si device than that in the rGO/Si, the decreased Schottky barrier height of the BrGO/n-Si vertical junction photodetector resulted in a higher responsivity. This study showcases a promise of a simple B-doping method in use to alter the electrical characteristics of graphene materials.