Broadening of Spectral Response Width by a-Si/a-SiGe p-i-n type Solar Cells

• Published in: Japanese Journal of Applied Physics Vol. 20; no. S2; p. 227
• Main Authors: Nakamura, Genshiro, Sato, Kazuhiko, Yukimoto, Yoshinori, Shirahata, Kiyoshi
• Format: Journal Article
• Language: English
• Published: 01.01.1981
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAPS.20S2.227

We report the MIS type a-Si:H solar cells, plasma analysis using quadrupole mass analyzer and tandem type solar cell which improved spectral response in the long wavelength region. MIS type a-Si:H solar cells inserting TiO x layer as an insulator show the conversion efficiency of 4.4%. The improvement of the collection efficiency in the short wavelength region were accomplished by decrease in interface state density with addition of TiO x film. Plasma polymerized species, (SiH m + ) 2 , increased with the rf power up to 40–50 W and decreased as a result of the decomposition to (SiH m + ) species, but in the case of GeH 4 reaction, (GeH m + ) 2 species decreased monotonously with rf power. Suitable condition of a-SiGe:H films deposition are related to the behavior of the polymerization and decomposition of SiH 4 and GeH 4 gases, and high quality films are obtained at relatively low rf power condition before (GeH m + ) 2 decomposition. Tandem type amorphous solar cell shows 3.2% coversion efficiency and the collection efficiency in the long wavelength region are clearly improved.