Formation of multi-atomic steps and novel [formula omitted] heterojunctions on vicinal (1 1 1)B substrates by MBE and anisotropic transport of 2D electrons

• Published in: Journal of crystal growth Vol. 175; pp. 1092 - 1096
• Main Authors: Nakamura, Y., Koshiba, S., Sakaki, H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.1997
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00963-3

We have investigated the MBE growth of GaAs on vicinal (1 1 1)B substrates and examined in detail the multi-atomic step structures appearing at the growth front as well as at the n-AlGaAs GaAs heterojunction. It has been found that the uniformity and periodicity of such steps depend strongly on the growth condition, especially As 4 flux, and that their morphology drastically affects transport of electrons flowing along heterojunctions. The use of high As 4 flux is effective in improving the step uniformity, and in drastically reducing the channel resistance perpendicular to the steps. Key factors for the fabrication of high-quality devices such as quantum wires on (1 1 1)B planes have been discussed.