Shortening Wavelength of AlGaInP Laser Diodes

When an AlGaInP laser diode is grown on a GaAs substrate misoriented 5-7° to the direction, the lasing wavelength of the diodes is shortened by about 20 nm compared with that of a diode using a (100) GaAs substrate. The diodes are grown by low pressure MOCVD. Using this technique, we obtained, for t...

Full description

Saved in:
Bibliographic Details
Published inRēzā kenkyū Vol. 18; no. 8; pp. 596 - 598
Main Authors HAMADA, Hiroki, SHONO, Masayuki, HONDA, Shoji, YODOSHI, Keiichi, YAMAGUCHI, Takao
Format Journal Article
LanguageEnglish
Published Suita The Laser Society of Japan 1990
Laser Society of Japan
Subjects
AlGaInP
Misoriented substrate
MOCVD
Reliability
Visible wavelength
Online AccessGet full text

Cover

More Information
Summary:When an AlGaInP laser diode is grown on a GaAs substrate misoriented 5-7° to the direction, the lasing wavelength of the diodes is shortened by about 20 nm compared with that of a diode using a (100) GaAs substrate. The diodes are grown by low pressure MOCVD. Using this technique, we obtained, for the first time, highly reliable AlGaInP laser diodes lasing at 567nm without adding Al to an active layer.
ISSN:0387-0200
1349-6603
DOI:10.2184/lsj.18.8_596