Scanning tunneling spectroscopy examination of surface electronic structures of [formula omitted] surface

Scanning tunneling spectroscopy (STS) measurements have been performed on Si(111)(2 3 ×2 3 )30°- Sn surface. Tunneling spectral analysis of the energy of the surface states around the Fermi-level ( E f) indicates two filled and two empty states straddling E f, showing a ∼ 1.6 eV surface bandgap. As...

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Bibliographic Details
Published inApplied surface science Vol. 104; pp. 223 - 227
Main Authors Lin, X.F., Chizhov, I., Mai, H.A., Willis, R.F.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.1996
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Summary:Scanning tunneling spectroscopy (STS) measurements have been performed on Si(111)(2 3 ×2 3 )30°- Sn surface. Tunneling spectral analysis of the energy of the surface states around the Fermi-level ( E f) indicates two filled and two empty states straddling E f, showing a ∼ 1.6 eV surface bandgap. As part of the identification of these surface states, STS spectra were also taken on a coexisting well-known 3 × 3 surface, and the intrisic nature of these surface states is discussed.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(96)00148-1