Electrolyte Additive Chemistry and Feature Size-Dependent Impurity Incorporation for Cu Interconnects

• Published in: ECS transactions Vol. 41; no. 43; pp. 23 - 33
• Main Authors: Kelly, James, Nogami, Takeshi, Van der Straten, O., Demarest, James, Li, Juntao, Penny, Chris, Vo, Tuan, Parks, Christopher, DeHaven, Patrick, Hu, Chao-Kun, Liniger, Eric
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society, Inc 04.05.2012
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.4717500

The role of electrolyte additive chemistry in the incorporation of non-metallic impurities (such as C, S, and Cl) in electrodeposited Cu and its subsequent recrystallization behavior was characterized for both blanket electrodeposited Cu films and Cu plated into Damascene features. Chemistries yielding both pure and "doped" Cu were considered. For wide features (~ >1 μm), impurity levels correspond well with blanket Cu film observations, while for narrow features (~50 nm), impurity levels were elevated within the features, regardless of chemistry type. Recrystallization within Damascene features was observed to be relatively insensitive to the electrodeposited Cu purity and instead more dependent on feature size.