Evaluation of Grain Size Distributions of Cu Interconnects with Less Than 100nm Width by X-ray Diffraction Method

Grain size distributions of less than 100nm wide Cu interconnects made by DC electroplating have been evaluated by a rapid and nondestructive method using X-ray diffraction. The influence of the depth and width in the trench and the thickness of electroplated Cu film on the grain size distribution i...

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Bibliographic Details
Published inECS transactions Vol. 41; no. 43; pp. 11 - 14
Main Authors Inami, Takashi, Onuki, Jin
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 04.05.2012
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Summary:Grain size distributions of less than 100nm wide Cu interconnects made by DC electroplating have been evaluated by a rapid and nondestructive method using X-ray diffraction. The influence of the depth and width in the trench and the thickness of electroplated Cu film on the grain size distribution in narrow Cu interconnect. It was found that the mean grain size of annealed narrow Cu interconnect depends linearly on the product of the ratio of excess Cu film thickness to trench depth and trench width.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.4717498