Evaluation of Grain Size Distributions of Cu Interconnects with Less Than 100nm Width by X-ray Diffraction Method
Grain size distributions of less than 100nm wide Cu interconnects made by DC electroplating have been evaluated by a rapid and nondestructive method using X-ray diffraction. The influence of the depth and width in the trench and the thickness of electroplated Cu film on the grain size distribution i...
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Published in | ECS transactions Vol. 41; no. 43; pp. 11 - 14 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
The Electrochemical Society, Inc
04.05.2012
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Online Access | Get full text |
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Summary: | Grain size distributions of less than 100nm wide Cu interconnects made by DC electroplating have been evaluated by a rapid and nondestructive method using X-ray diffraction. The influence of the depth and width in the trench and the thickness of electroplated Cu film on the grain size distribution in narrow Cu interconnect. It was found that the mean grain size of annealed narrow Cu interconnect depends linearly on the product of the ratio of excess Cu film thickness to trench depth and trench width. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.4717498 |