54 Model of the epitaxial chemical vapor deposition reactor for design and performance optimization

Model of the epitaxial chemical vapor deposition reactor is developed based on fundamental physicochemical principles. Kinetics of the heterogeneous deposition reaction is taken into account simultaneously with transport phenomena which occur in the gas phase above deposition surface. Obtained set o...

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Bibliographic Details
Published inChemical engineering science Vol. 35; no. 1; pp. 429 - 436
Main Authors Jůza, J., Čermák, J.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 1980
Subjects
chemical vapor deposition
Epitaxial reactor
phenomenological model
reactor design
thermodiffusion
thermodiffusion
phenomenological model
Epitaxial reactor
reactor design
chemical vapor deposition
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Summary:Model of the epitaxial chemical vapor deposition reactor is developed based on fundamental physicochemical principles. Kinetics of the heterogeneous deposition reaction is taken into account simultaneously with transport phenomena which occur in the gas phase above deposition surface. Obtained set of partial differential equations is solved numerically, the results being compared with representative set of experimental data and with previously published models. The comparison has demonstrated the suitability of the model for process design purposes.
ISSN:0009-2509
1873-4405
DOI:10.1016/0009-2509(80)80116-3