Contribution to the study of impurity levels in CdTe films: A material for λ-ray detectors and solar cells
From a study of space-charge-limited conduction and transient photoconductivity effects we propose two theoretical models and we apply them to n-type CdTe films with a uniform distribution of traps in the band gap. The essential characteristics of the phenomena and the corresponding values of the po...
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| Published in | Thin solid films Vol. 58; no. 1; pp. 83 - 88 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
15.03.1979
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| Online Access | Get full text |
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| Summary: | From a study of space-charge-limited conduction and transient photoconductivity effects we propose two theoretical models and we apply them to n-type CdTe films with a uniform distribution of traps in the band gap. The essential characteristics of the phenomena and the corresponding values of the position and width of the distribution, the density and capture cross section of the trapping and recombination centres and the lifetime of the carriers are determined. |
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| ISSN: | 0040-6090 1879-2731 |
| DOI: | 10.1016/0040-6090(79)90214-1 |