Influence of imperfections in the crystal structure of gallium arsenide on the parameters of electron-beam excited lasers

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Bibliographic Details
Published inSoviet journal of quantum electronics Vol. 5; no. 5; pp. 577 - 579
Main Authors Grigor'ev, O N, Gridneva, I V, Krasavina, E M, Kryukova, I V, Chugunova, S I
Format Journal Article
LanguageEnglish
Published IOP Publishing 31.05.1975
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ISSN:0049-1748
2169-530X
DOI:10.1070/QE1975v005n05ABEH011200