Influence of stoechiometry and hydrogen bonding on the insulating properties of PECVD silicon nitride

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Bibliographic Details
Published inPhysica B + C Vol. 129; no. 1; pp. 215 - 219
Main Authors Chaussat, C., Bustarret, E., Bruyere, J.C., Groleau, R.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1985
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ISSN:0378-4363
DOI:10.1016/0378-4363(85)90572-8