Microwave Power GaAs/AlGaAs Heterojunction Bipolar Transistor Modelling

A high power heterojunction bipolar transistor has been designed and fabricated. A model of this transistor has been developed for the SPICE simulation package. A program has been written to use SPICE to run simulations on the model and calculate matching conditions for optimum output power.

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Bibliographic Details
Published inESSDERC '88: 18th European Solid State Device Research Conference pp. c4-579 - c4-582
Main Authors Metcalfe, J.G., Hayes, R.C., Holden, A.J., Long, A.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1988
Subjects
Breakdown voltage
Gallium arsenide
Heterojunction bipolar transistors
Impedance
Integrated circuit modeling
MESFETs
Microwave devices
Microwave transistors
Power transistors
SPICE
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Summary:A high power heterojunction bipolar transistor has been designed and fabricated. A model of this transistor has been developed for the SPICE simulation package. A program has been written to use SPICE to run simulations on the model and calculate matching conditions for optimum output power.
ISBN:9782868830999
2868830994
DOI:10.1051/jphyscol:19884122