Synthetic semiconductor diamond electrodes: determination of acceptor concentration by linear and non-linear impedance measurements

The non-compensated boron concentration in thin films of boron-doped polycrystalline diamond, chemically vapour deposited onto tungsten or silicon substrates, was determined by the methods of differential capacitance and amplitude demodulation. In the case of frequency-independent capacitance, both...

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Bibliographic Details
Published inJournal of electroanalytical chemistry (Lausanne, Switzerland) Vol. 396; no. 1; pp. 227 - 232
Main Authors Pleskov, Yu.V., Mishuk, V.Ya, Abaturov, M.A., Elkin, V.V., Krotova, M.D., Varnin, V.P., Teremetskaya, I.G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 31.10.1995
Subjects
Acceptor concentration
Impedance measurements
Synthetic semiconductor diamond electrodes
Acceptor concentration
Impedance measurements
Synthetic semiconductor diamond electrodes
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Summary:The non-compensated boron concentration in thin films of boron-doped polycrystalline diamond, chemically vapour deposited onto tungsten or silicon substrates, was determined by the methods of differential capacitance and amplitude demodulation. In the case of frequency-independent capacitance, both methods give practically the same concentration value. For samples with frequency-dependent capacitance, an upper estimate of the concentration was obtained (using both methods) of the same order of magnitude. In this case, the electrode impedance includes a constant-phase element.
ISSN:1572-6657
1873-2569
DOI:10.1016/0022-0728(95)04018-J