Influence of different precursor surface layers on Cu(In1-xGax)Se2 thin film solar cells

• Published in: Applied physics. A, Materials science & processing Vol. 88; no. 4; pp. 653 - 656
• Main Authors: LIU, W, SUN, Y, LI, W, LI, C.-J, LI, F.-Y, TIAN, J.-G
• Format: Journal Article
• Language: English
• Published: Berlin Springer 01.09.2007; Springer Nature B.V
• Subjects: Absorbers; Applied physics; Applied sciences; Copper indium gallium selenides; Energy; Exact sciences and technology; Materials science; Natural energy; Photovoltaic cells; Photovoltaic conversion; Precursors; Raman spectra; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Surface layers; Thin films; Solar cell; Copper selenides; Secondary ion mass spectra; Indium selenides; Surface layer; Illumination; Quantum yield; X ray diffraction; Gallium selenides; Raman spectrum; Thin film
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-007-4021-x

The properties of Cu(In1-xGax)Se2 (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD, SEM, SIMS, illuminated J–V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further improved.