In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity

In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectroscopy （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectiv...

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Published in等离子体科学与技术：英文版 no. 3; pp. 239 - 243
Main Author 饶志鹏 万军 李超波 陈波 刘键 黄成强 夏洋
Format Journal Article
LanguageEnglish
Published 2014
Subjects
TiO2光催化剂
TiO2薄膜
XPS分析
X射线光电子能谱
光催化活性
原位掺杂
原子层沉积
氮掺杂
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ISSN1009-0630
DOI10.1088/1009-0630/16/3/12

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Summary:In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectroscopy （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425-550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process.
Bibliography:plasma-enhanced atomic layer deposition, in-situ, nitrogen plasma, N-dopedTiO2, photocatalyst
RAO Zhipeng,WAN Jun,LI Chaobo,CHEN Bo , LIU Jian , HUANG Chengqiang , XIA Yang（1Key Laboratory of Microelectronics Devices＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 2Jiaxing Research and Commercialization Center for Microelectronics Equipment, Jiaxing 314006, China 3Jiaxing Kemin Electronic Equipment ＆ Technologies CO., LTD, Jiaxing 314006, China）
In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectroscopy （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425-550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process.
34-1187/TL
ISSN:1009-0630
DOI:10.1088/1009-0630/16/3/12