Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs

• Published in: 2012 4th IEEE International Memory Workshop pp. 1 - 4
• Main Authors: Butcher, B., Bersuker, G., Young-Fisher, K. G., Gilmer, D. C., Kalantarian, A., Nishi, Y., Geer, R., Kirsch, P. D., Jammy, R.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2012
• Subjects: Hafnium compounds; Integrated circuits; Performance evaluation; Resistance; Switches; Temperature distribution

A method of forming RRAM devices at elevated temperatures (hot forming) is proposed. By drastically reducing time-to-forming, this hot forming method enables forming to be performed using low constant voltage biases, which is shown to increase resistance of the conductive filament, lower operational...