Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs

A method of forming RRAM devices at elevated temperatures (hot forming) is proposed. By drastically reducing time-to-forming, this hot forming method enables forming to be performed using low constant voltage biases, which is shown to increase resistance of the conductive filament, lower operational...

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Bibliographic Details
Published in2012 4th IEEE International Memory Workshop pp. 1 - 4
Main Authors Butcher, B., Bersuker, G., Young-Fisher, K. G., Gilmer, D. C., Kalantarian, A., Nishi, Y., Geer, R., Kirsch, P. D., Jammy, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2012
Subjects
Hafnium compounds
Integrated circuits
Performance evaluation
Resistance
Switches
Temperature distribution
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Summary:A method of forming RRAM devices at elevated temperatures (hot forming) is proposed. By drastically reducing time-to-forming, this hot forming method enables forming to be performed using low constant voltage biases, which is shown to increase resistance of the conductive filament, lower operational current, increase memory window and improve device-to-device uniformity.
ISBN:9781467310796
1467310794
ISSN:2159-483X
DOI:10.1109/IMW.2012.6213647