Improvement microwave dielectric properties of Zn2SnO4 ceramics by substituting Sn4+ with Si4
The microwave dielectric properties of Zn 2 (Sn (1−x) Si x )O 4 ceramics were examined with a view to their exploitation for mobile communication. The Zn 2 (Sn (1−x) Si x )O 4 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction pat...
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Published in | Journal of materials science. Materials in electronics Vol. 25; no. 5; pp. 2120 - 2125 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Boston
Springer US
01.05.2014
|
Subjects | |
Online Access | Get full text |
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Summary: | The microwave dielectric properties of Zn
2
(Sn
(1−x)
Si
x
)O
4
ceramics were examined with a view to their exploitation for mobile communication. The Zn
2
(Sn
(1−x)
Si
x
)O
4
ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Zn
2
(Sn
(1−x)
Si
x
)O
4
ceramics revealed no significant variation of phase with sintering temperatures. A maximum density of 6.24 g/cm
3
was obtained for Zn
2
(Sn
0.93
Si
0.07
)O
4
ceramic, sintered at 1,175 °C for 4 h. Dielectric constant (
ɛ
r
) of 8.12, quality factor (
Q
×
f
) of 55,500 GHz, and temperature coefficient of resonant frequency (
τ
f
) of −119.3 ppm/°C were obtained for Zn
2
(Sn
0.93
Si
0.07
)O
4
ceramics that were sintered at 1,175 °C for 4 h. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-014-1848-8 |