Improvement microwave dielectric properties of Zn2SnO4 ceramics by substituting Sn4+ with Si4

• Published in: Journal of materials science. Materials in electronics Vol. 25; no. 5; pp. 2120 - 2125
• Main Authors: Chen, Yih-Chien, Su, Chien-Fang, Weng, Min-Zhe, You, Hong-Mine, Chang, Kuang-Chiung
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.05.2014
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Materials Science; Optical and Electronic Materials; Resonant Frequency; Dielectric Constant; SnO2; Sinter Temperature; Apparent Density
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-014-1848-8

The microwave dielectric properties of Zn 2 (Sn (1−x) Si x )O 4 ceramics were examined with a view to their exploitation for mobile communication. The Zn 2 (Sn (1−x) Si x )O 4 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Zn 2 (Sn (1−x) Si x )O 4 ceramics revealed no significant variation of phase with sintering temperatures. A maximum density of 6.24 g/cm 3 was obtained for Zn 2 (Sn 0.93 Si 0.07 )O 4 ceramic, sintered at 1,175 °C for 4 h. Dielectric constant ( ɛ r ) of 8.12, quality factor ( Q  ×  f ) of 55,500 GHz, and temperature coefficient of resonant frequency ( τ f ) of −119.3 ppm/°C were obtained for Zn 2 (Sn 0.93 Si 0.07 )O 4 ceramics that were sintered at 1,175 °C for 4 h.