Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm

A field-effect transistor (FET) with a gate length of 13 nm having a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) channel was fabricated. The CAAC-IGZO FET has an off-state leakage current of 200 yA/μm, a cutoff frequency of 60GHz, and a maximum oscillation frequency of 16GHz. A CAAC-IGZO F...

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Bibliographic Details
Published inECS transactions Vol. 98; no. 7; pp. 13 - 27
Main Authors Suzuki, Akio, Yuichi, Yanagisawa, Mizukami, Shota, Tsuda, Kazuki, Ito, Minato, Ohshima, Kazuaki, Matsumoto, Noriko, Yakubo, Yuto, Miyata, Shoki, Okuno, Naoki, Kunitake, Hitoshi, Sasagawa, Shinya, Ikeda, Takayuki, Yamazaki, Shunpei
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 08.09.2020
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Summary:A field-effect transistor (FET) with a gate length of 13 nm having a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) channel was fabricated. The CAAC-IGZO FET has an off-state leakage current of 200 yA/μm, a cutoff frequency of 60GHz, and a maximum oscillation frequency of 16GHz. A CAAC-IGZO FET, though it is a small transistor, withstands voltages up to approximately 2.5 V. It also has stable current characteristics with less temperature dependence than Si devices. We have constructed an equivalent-circuit model of the CAAC-IGZO FET and designed an RF amplifier to show CAAC-IGZO FET's applicability to the GHz-range RF circuitry.
ISSN:1938-5862
1938-6737
DOI:10.1149/09807.0013ecst