60Co gamma irradiation effects on the the capacitance and conductance characteristics of Au/PMI/n-Si Schottky diodes

• Published in: Indian journal of physics Vol. 89; no. 8; pp. 803 - 810
• Main Authors: Tuğluoğlu, N., Karadeniz, S., Yüksel, Ö. F., Şafak, H., Kuş, M.
• Format: Journal Article
• Language: English
• Published: New Delhi Springer India 01.08.2015
• Subjects: Astrophysics and Astroparticles; Original Paper; Physics; Physics and Astronomy; Gamma irradiation; Perylene monoimide; 73.30. + y; 73.40.Ns; 73.40.Lq; Spin coating process; 71.20.Mq; Barrier height; Series resistance; Interface state density
• ISSN: 0973-1458; 0974-9845
• DOI: 10.1007/s12648-015-0651-6

In this work, the perylene-monoimide/n-Si (100) Schottky structures have been fabricated by spin coating process. We have studied the capacitance–voltage ( C – V ) and conductance-voltage ( G – V ) characteristics of the Au/perylene-monoimide/n-Si diodes at 500 kHz before and after 60 Co γ -ray irradiation. The effects of 60 Co γ -ray irradiation on the electrical characteristics of a perylene-monoimide/n-Si Schottky diode have been investigated. A decrease both in the capacitance and conductance has been observed after 60 Co γ -ray irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of 60 Co γ -ray irradiation. Some contact parameters such as barrier height (Φ B ) interface state density ( N ss ) and series resistance ( R s ) have been calculated from the C – V and G – V characteristics of the diode before and after irradiation. It has been observed that the Φ B and N ss values are decreased after the applied radiation, while the R s value is increased.