Application of Physics-of-Failure Method in Reliability Engineering of Electronic Products

Physics-of-Failure (PoF) represents one approach to reliability assessment based on modeling and simulation that relies on understanding the physical processes contributing to the appearance of the critical failures. Firstly the connotation and meaning of PoF method were analyzed here, the inherence...

Full description

Saved in:
Bibliographic Details
Published inApplied Mechanics and Materials Vol. 313-314; pp. 697 - 701
Main Authors Shao, Jiang, Zeng, Chen Hui
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.03.2013
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Physics-of-Failure (PoF) represents one approach to reliability assessment based on modeling and simulation that relies on understanding the physical processes contributing to the appearance of the critical failures. Firstly the connotation and meaning of PoF method were analyzed here, the inherence relation between PoF and reliability was expatiated, the PoF based reliability method and current reliability method based on probability statistics were compared, their differences and relationships were discussed here. Then the application condition of PoF method in reliability engineering in European and American developed country and China were summarized, the PoF based reliability engineering technologies were introduced systemically from several aspects, such as reliability design and analysis, reliability test and validation, maintain and support. Finally, combining with the developing characteristics of military materiel during the new period, some future investigation directions and application foregrounds were prospected.
Bibliography:Selected, peer reviewed papers from the 2012 2nd International Conference on Machinery Electronics and Control Engineering (ICMECE 2012), December 29-30, 2012, Jinan, Shandong, China
ISBN:303785684X
9783037856840
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.313-314.697