SiC UV Detectors under Heavy Ions Irradiation

4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe ions at a fluence of 6x109 cm-2. Comparative studies...

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Bibliographic Details
Published inMaterials science forum Vol. 821-823; pp. 867 - 870
Main Authors Ottaviani, Laurent, Skuratov, Vladimir A., Lebedev, Alexander A., Kalinina, Evgenia V., Berenguier, Baptiste
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 30.06.2015
Subjects
Quantum Efficiency
Detector
Ultraviolet
Heavy Ions
Radiation
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Summary:4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe ions at a fluence of 6x109 cm-2. Comparative studies of the optical and electrical properties of initial and irradiated structures with Schottky barriers were carried out in temperature range 23-180°C. Swift heavy ion stimulated changes in photosensitivity and electrical characteristics of the initial and irradiated detectors are explained in terms of the fluctuation traps model with the subsequent thermal dissociation.
Bibliography:Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.821-823.867