Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels

• Published in: Applied physics letters Vol. 104; no. 18
• Main Authors: Lin, Meng-Yu, Chen, Yen-Hao, Wang, Cheng-Hung, Su, Chen-Fung, Chang, Shu-Wei, Lee, Si-Chen, Lin, Shih-Yen
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 05.05.2014
• Subjects: Applied physics; Channels; Current modulation; Fermi level; Graphene; Silicon; Tuning

Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the...