Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels

Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the...

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Published inApplied physics letters Vol. 104; no. 18
Main Authors Lin, Meng-Yu, Chen, Yen-Hao, Wang, Cheng-Hung, Su, Chen-Fung, Chang, Shu-Wei, Lee, Si-Chen, Lin, Shih-Yen
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 05.05.2014
Subjects
Applied physics
Channels
Current modulation
Fermi level
Graphene
Silicon
Tuning
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Summary:Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the narrow-gap device. In addition, further p-type tuning was not observed in the wide-gap device at negative gate biases. These phenomena indicated that both devices had distinct field-strength dependences and Fermi level tuning effects, which may be critical for the practical design of devices.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4875583