Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels

Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the...

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Published inApplied physics letters Vol. 104; no. 18
Main Authors Lin, Meng-Yu, Chen, Yen-Hao, Wang, Cheng-Hung, Su, Chen-Fung, Chang, Shu-Wei, Lee, Si-Chen, Lin, Shih-Yen
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 05.05.2014
Subjects
Applied physics
Channels
Current modulation
Fermi level
Graphene
Silicon
Tuning
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Abstract Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the narrow-gap device. In addition, further p-type tuning was not observed in the wide-gap device at negative gate biases. These phenomena indicated that both devices had distinct field-strength dependences and Fermi level tuning effects, which may be critical for the practical design of devices.
AbstractList Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the narrow-gap device. In addition, further p-type tuning was not observed in the wide-gap device at negative gate biases. These phenomena indicated that both devices had distinct field-strength dependences and Fermi level tuning effects, which may be critical for the practical design of devices.
Author Wang, Cheng-Hung
Su, Chen-Fung
Lee, Si-Chen
Lin, Shih-Yen
Chen, Yen-Hao
Chang, Shu-Wei
Lin, Meng-Yu
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Snippet Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type...
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SubjectTerms Applied physics
Channels
Current modulation
Fermi level
Graphene
Silicon
Tuning
Title Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels
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