Measurement of Static Random Access Memory Power-Up State Using an Addressable Cell Array Test Structure

The data stored in a static random access memory (SRAM) immediately after power-up is of practical interest for some applications, such as SRAM physical unclonable functions. In this paper, measurements of SRAM cell power-up state (i.e., whether the cell is storing 0 or 1 after the power supply is t...

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Bibliographic Details
Published inIEEE transactions on semiconductor manufacturing Vol. 30; no. 3; pp. 209 - 215
Main Authors Takeuchi, Kiyoshi, Mizutani, Tomoko, Shinohara, Hirofumi, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Format Journal Article
LanguageEnglish
Published IEEE 01.08.2017
Subjects
Noise measurement
Physical unclonable function (PUF)
Semiconductor device measurement
SRAM
SRAM cells
Switches
test structure
Transistors
Voltage measurement
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Summary:The data stored in a static random access memory (SRAM) immediately after power-up is of practical interest for some applications, such as SRAM physical unclonable functions. In this paper, measurements of SRAM cell power-up state (i.e., whether the cell is storing 0 or 1 after the power supply is turned on) using an addressable cell array test structure are reported. The test structure provides direct access to individual transistor characteristics of many SRAM cells, which would facilitate the characterization of SRAM power-up behavior. Methods and considerations necessary for reliable and stable power-up state characterization using the test structure will be discussed and demonstrated.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2017.2692805