Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices

The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional electron gas (2-DEG). Utilizing a nanostrip patch type planar coupling circuit, mutual injection locking bet...

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Bibliographic Details
Published inIEEE access Vol. 12; pp. 123656 - 123677
Main Authors Banerjee, Partha, Acharyya, Aritra, Das, Rajib, Biswas, Arindam, Bhattacharjee, Anup Kumar, Mallik, Saurav, Alshahrani, Haya Mesfer, Elshiekh, E., Abbas, Mohamed, Soufiene, Ben Othman
Format Journal Article
LanguageEnglish
Published IEEE 2024
Subjects
2-DEG
AlGaN/GaN
Aluminum gallium nitride
coupling circuit
Electrons
Gallium arsenide
HEM-ATT
injection locking
Injection-locked oscillators
monolithic integration
Oscillators
power combination
Schottky diodes
terahertz
Terahertz communications
Wide band gap semiconductors
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Summary:The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional electron gas (2-DEG). Utilizing a nanostrip patch type planar coupling circuit, mutual injection locking between adjacent elements is achieved. The paper provides a comprehensive analysis of the integrated power combining technique in the mutually injection-locked multi-element HEM-ATT oscillator. A ten-element mutually injection-locked integrated power combined source is designed for operation at 1.0 THz, and simulation studies are conducted to examine its DC, large-signal, and avalanche noise characteristics. The capability of generating a narrow-band terahertz wave is verified by introducing various levels of structural mismatches between the elements. Results indicate that the ten-element HEM-ATT oscillator can deliver 2.27 W peak power with a 17% DC to THz conversion efficiency at 1.0 THz. The average noise measure of the oscillator is found to be 12.54 dB. Additionally, the terahertz performance of the mutually injection-locked ten-element HEM-ATT oscillator is compared with other state-of-the-art THz sources to evaluate its potentiality as an excellent integrated THz radiator.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2024.3424770