Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs

• Published in: IEEE transactions on electron devices Vol. 65; no. 2; pp. 793 - 797
• Main Authors: Wier, Brian R., Raghunathan, Uppili S., Fleetwood, Zachary E., Oakley, Michael A., Joseph, Alvin J., Jain, Vibhor, Cressler, John D.
• Format: Journal Article
• Language: English
• Published: IEEE 01.02.2018
• Subjects: Breakdown; Doping; Electric breakdown; Heterojunction bipolar transistors; Junctions; Semiconductor process modeling; Silicon germanium; silicon–germanium hetero-junction bipolar transistor (SiGe HBT); superjunction

The implementation of a "superjunction" collector design in a silicon-germanium heterojunction bipolar transistor technology is explored for enhancing breakdown performance. The superjunction collector is formed via the placement of a series of alternating the p/xn-doped layers in the coll...