Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs

The implementation of a "superjunction" collector design in a silicon-germanium heterojunction bipolar transistor technology is explored for enhancing breakdown performance. The superjunction collector is formed via the placement of a series of alternating the p/xn-doped layers in the coll...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 65; no. 2; pp. 793 - 797
Main Authors Wier, Brian R., Raghunathan, Uppili S., Fleetwood, Zachary E., Oakley, Michael A., Joseph, Alvin J., Jain, Vibhor, Cressler, John D.
Format Journal Article
LanguageEnglish
Published IEEE 01.02.2018
Subjects
Breakdown
Doping
Electric breakdown
Heterojunction bipolar transistors
Junctions
Semiconductor process modeling
Silicon germanium
silicon–germanium hetero-junction bipolar transistor (SiGe HBT)
superjunction
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Summary:The implementation of a "superjunction" collector design in a silicon-germanium heterojunction bipolar transistor technology is explored for enhancing breakdown performance. The superjunction collector is formed via the placement of a series of alternating the p/xn-doped layers in the collector-base space charge region and is used to reduce avalanche generation leading to breakdown. An overview of the physics underlying superjunction collector operation is presented, together with TCAD simulations, and a parameterization methodology is developed to explore the limits of the superjunction collector performance. Measured data demonstrate the limitations explored in simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2782768