Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO 3 ) 3 Process

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 47; no. 7R; p. 5724
Main Authors Maeda, Masatoshi, Iwasaki, Shin, Kamimura, Takafumi, Murata, Katsuyuki, Matsumoto, Kazuhiko
Format Journal Article
LanguageEnglish
Published 01.07.2008
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.5724