Low working loss Si/4H–SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect
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| Published in | Journal of Electronic Science and Technology Vol. 21; no. 4; p. 100224 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
01.12.2023
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| Online Access | Get full text |
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| ISSN: | 1674-862X |
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| DOI: | 10.1016/j.jnlest.2023.100224 |