Investigation of 1,1-dichloroethene interacting with the Si(111)–7×7 surface studied by scanning tunneling microscopy

• Published in: Surface science Vol. 603; no. 1; pp. 84 - 90
• Main Authors: Andersen, T.H., Svenum, I.-H., Gabrielsen, A., Borg, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2009
• Subjects: 1,1-dichloroethene; Chemisorption; Rest atom; Scanning tunneling microscopy; Silicon; Scanning tunneling microscopy; Chemisorption; 1,1-dichloroethene; Silicon; Rest atom
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2008.10.032

Adsorption of 1,1-dichloroethene (1,1-DCE) at the Si(111)–7×7 surface has been investigated using scanning tunneling microscopy. 1,1-DCE dissociates upon adsorption by breaking one or both CCl bonds. The appearance of reacted adatoms in the 7×7 reconstruction is found to vary for both positive and negative sample bias voltages in the range of 0.8V to 2.5V. Dissociated Cl atoms bond to adatom sites and appear bright for bias voltages higher than ±1.4V. The other dissociated species appear dark for bias voltages below ±1.85V with a preference of 2:1 for bonding to center relative to corner adatom sites. The faulted half unit cell is preferred. It is demonstrated that rest atoms are active in the dissociation of two-thirds of the 1,1-DCE molecules.