Characterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy

This paper uses the transmission ion channeling technique on the NUS Singletron accelerator to map misfit dislocations at the interface of a SiGe layer epitaxially grown on a (001) silicon substrate. A bunch of five 60° dislocations and a single dislocation have been studied using a focused 2MeV pro...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 231; no. 1-4; pp. 452 - 456
Main Authors Huang, L., Breese, M.B.H., Teo, E.J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2005
Subjects
Misfit dislocation
Transmission ion channeling
07.78.+s
Misfit dislocation
Transmission ion channeling
61.80.Li
61.85.+p
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Summary:This paper uses the transmission ion channeling technique on the NUS Singletron accelerator to map misfit dislocations at the interface of a SiGe layer epitaxially grown on a (001) silicon substrate. A bunch of five 60° dislocations and a single dislocation have been studied using a focused 2MeV proton beam with a spatial resolution of 60nm and good image statistics. The bent (110) planes due to 60° dislocations cause the image contrast to change asymmetrically while tilting the sample close to the channeling direction.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2005.01.099