Thickness scaling and electric properties of highly (111) oriented Nb-doped Pb(Zr,Ti)O3 thin film prepared at low temperature by a sol–gel route

A series of highly (111) oriented Pb(Nb 0.01 Zr 0.2 Ti 0.8 )O 3 (PNZT) thin films of variant thickness were successfully achieved on Pt/Ti/SiO 2 /Si substrate by a sol–gel route. By introducing Pb 0.8 Ca 0.1 La 0.1 Ti 0.975 O 3 (PLCT) layer between the PNZT film and Pt electrode, the PNZT film could...

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Bibliographic Details
Published inJournal of materials science Vol. 46; no. 10; pp. 3309 - 3313
Main Authors Chi, Q. G., Li, W. L., Wang, X., Fei, W. D.
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.05.2011
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Copper
Crystallization
Crystallography and Scattering Methods
Electric properties
Film thickness
Lattice matching
Lead zirconate titanates
Low temperature
Low voltage
Materials Science
Niobium
Optimization
Polymer Sciences
Properties (attributes)
Silicon dioxide
Silicon substrates
Sol-gel processes
Solid Mechanics
Thin films
Zirconium
Ferroelectric Thin Film
Ferroelectric Random Access Memory
Pyroelectric Coefficient
Pyroelectric Property
Seed Layer
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Summary:A series of highly (111) oriented Pb(Nb 0.01 Zr 0.2 Ti 0.8 )O 3 (PNZT) thin films of variant thickness were successfully achieved on Pt/Ti/SiO 2 /Si substrate by a sol–gel route. By introducing Pb 0.8 Ca 0.1 La 0.1 Ti 0.975 O 3 (PLCT) layer between the PNZT film and Pt electrode, the PNZT film could be crystallized at as low as 500 °C. When a maximum applied voltage is 3 V, it was found that the PNZT film with PLCT seed layer possessed higher remnant polarization (22 μC/cm 2 ) as film thickness was scaled down to 50 nm. It was also found that enhanced pyroelectric properties could be observed in 50-nm thickness PNZT thin film due to its relatively low dielectric constant. The results demonstrated that the film thickness could be scaled down for low voltage operations using lattice matched interface between PNZT film and PLCT seed layer on Pt/Ti/SiO 2 /Si substrate, and this interface optimization is the key technology for synthesizing thin PNZT films at low temperature with good insulating and electric properties.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-010-5217-6