Erratum: STI edge effect on the series resistance of CMOS Schottky barrier diodes

ABSTRACT An analysis of the shallow trench isolation (STI) edge effect on CMOS Schottky barrier diode (SBD) is reported in this article. The STI edge effect, which includes the impact of the fringing electric field and the nonplanar intersection of STI, significantly distorts the performance of SBDs...

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Bibliographic Details
Published inMicrowave and optical technology letters Vol. 56; no. 8; p. 1970
Main Authors Lee, Jaelin, Kim, Suna, Hong, Jong-Phil, Lee, Sang-Gug
Format Journal Article
LanguageEnglish
Published New York Blackwell Publishing Ltd 01.08.2014
Wiley Subscription Services, Inc
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Summary:ABSTRACT An analysis of the shallow trench isolation (STI) edge effect on CMOS Schottky barrier diode (SBD) is reported in this article. The STI edge effect, which includes the impact of the fringing electric field and the nonplanar intersection of STI, significantly distorts the performance of SBDs with a small junction. Due to this effect, when an array SBD is formed by connecting several SBDs with a small junction in parallel, the series resistance of the array SBD is not reduced as expected. Therefore, the cut‐off frequency of an array SBD with a small unit junction SBD degenerates quickly. This phenomenon is observed in measurements of fabricated CMOS SBD prototypes. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:932–935, 2014; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.28218. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1970, 2014; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.28494
Bibliography:ArticleID:MOP28494
istex:3C7F833A4D09460F9D17AD70815E91F65B830426
ark:/67375/WNG-M76QR7DC-N
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.28494