Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response

• Published in: Optics express Vol. 17; no. 7; pp. 5193 - 5204
• Main Authors: Geis, M W, Spector, S J, Grein, M E, Yoon, J U, Lennon, D M, Lyszczarz, T M
• Format: Journal Article
• Language: English
• Published: United States 30.03.2009
• Subjects: Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Infrared Rays; Microwaves; Photometry - instrumentation; Reproducibility of Results; Sensitivity and Specificity; Silicon - chemistry; Silicon - radiation effects; Transducers; Transistors, Electronic
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/oe.17.005193

SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.