AN INNER-FEEDBACK-STYLE TRAVELING-WAVE TUBE OSCILLATOR

A new concept of inner-feedback-style traveling wave tube oscillator, which is based on a traveling-wave tube having a partial reflector located at near the junction between the slow-wave structure and the output coupler and a mechanical tuner connected to the input coupler, is proposed. Simulations...

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Bibliographic Details
Published inJournal of electronics (China) Vol. 29; no. 6; pp. 556 - 561
Main Authors Wang, Zicheng, Li, Haiqiang, Xu, Anyu, Liu, Qinglun, Liu, Wei
Format Journal Article
LanguageEnglish
Published Heidelberg SP Science Press 2012
Graduate University of Chinese Academy of Science, Beijing 100039, China
Institute of Electronics, Chinese Academy of Science, Beijing 100190, China%Institute of Electronics, Chinese Academy of Science, Beijing 100190, China
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Summary:A new concept of inner-feedback-style traveling wave tube oscillator, which is based on a traveling-wave tube having a partial reflector located at near the junction between the slow-wave structure and the output coupler and a mechanical tuner connected to the input coupler, is proposed. Simulations by CHIPIC code show that the inner-feedback-style traveling wave tube oscillator having 100W of power, about 10% of electron efficiency and a tunable band of 73.35-73.91 GHz may be achieved. Compared with Backward Wave Oscillators (BWOs), the new devices have similar ability for tuning, and have much higher electron efficiency, suggesting much more potential as a Terahertz source.
Bibliography:11-2003/TN
W band; Inner-feedback-style traveling-wave tube oscillator; THz sources
A new concept of inner-feedback-style traveling wave tube oscillator, which is based on a traveling-wave tube having a partial reflector located at near the junction between the slow-wave structure and the output coupler and a mechanical tuner connected to the input coupler, is proposed. Simulations by CHIPIC code show that the inner-feedback-style traveling wave tube oscillator having 100W of power, about 10% of electron efficiency and a tunable band of 73.35-73.91 GHz may be achieved. Compared with Backward Wave Oscillators (BWOs), the new devices have similar ability for tuning, and have much higher electron efficiency, suggesting much more potential as a Terahertz source.
ISSN:0217-9822
1993-0615
DOI:10.1007/s11767-012-0889-5